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| 780 nm Semiconductor Optical Amplifier for Spectroscopy Applications | |
Optical Amplifier
from TOPTICA EAGLEYARD
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| The EYP-TPA-0780-03000-4006-BTU02-0000 from TOPTICA EAGLEYARD is a Tapered Semiconductor Optical Amplifier that operates at a wavelength of 780 nm. It delivers an output power above 3 W and has a gain width (FWHM) of 20 nm. This continuous wave SOA has an amplification of 23 dB and a temperature coefficient of wavelength of 0.3 nm/K. It is ideal for spectroscopy applications. |
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| 1040 nm Femtosecond Laser for Material Processing Applications | |
Laser
from MKS | Spectra-Physics
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| The Spirit HE 1040-30-SHG from MKS | Spectra-Physics is a Femtosecond Laser that operates at a wavelength of 1040 nm and 520 nm (SHG). It delivers an output power of greater than 30 W & 15 W (SHG) and is ideal for femtosecond micromachining, material processing, medical device fabrication, time resolved spectroscopy & optical parametric amplifier pumping applications. |
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| 1080 nm Fiber Laser for Cutting & Welding Applications | |
Laser
from TRUMPF
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| The TruFiber 3001 G from TRUMPF is a Fiber Laser that operates at a wavelength of 1080 nm. It delivers an output power of 3000 W and has a power constancy of ± 1%. This multimode laser has an adjustable power range of 2% - 100%, a laser light cable length of 20 m, and diameter of 100 µm. It is ideal for precise cutting, marking, and welding applications. |
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| 520 nm Green Dot Laser for Pointing & Sensor Applications | |
Laser
from IMM Photonics GmbH
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| The IMM1040-520-5-E-X from IMM Photonics is a Green Dot Laser that operates at a wavelength of 520 nm. It delivers an output power of 5 mW and has a power stability of less than 6%. This Class 1 or Class 3B laser produces a beam of diameter 1 mm x 3 mm and has a beam divergence of 0.4 mrad. It is ideal for pointing, laboratory instruments, and sensor applications. |
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| 193 nm Laser Mirror for Ultraviolet Laser Applications | |
Optical Mirror
from OPTOMAN
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| The PP-UVFS-25.4-6.35-LLM290 from OPTOMAN is a Laser Mirror that operates at a wavelength of 193 nm. It has a diameter of 25.4 mm, thickness of 6.35 mm, and chip size of less than 0.2 mm. This UV-grade fused silica (UVFS) optical mirror has a clear aperture of 22 mm and surface quality of 10-5 S-D (scratch-dig) (S1/S2). It has a maximum surface flatness of 1/10th of wavelength (at 633 nm) and is ideal for ultraviolet laser applications. |
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| 700 nm - 1200 nm, TeO2 Acousto-Optic Tunable Filter | |
Acousto-Optic Tunable Filter
from G&H
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| The TF950-500-1-2-GH96 from G&H is a Tellurium Dioxide Acousto-Optic Tunable Filter that operates at a wavelength of 700 nm - 1200 nm. It has an active aperture of 2.5 mm and a bandwidth of 0.6 nm. This AOTF uses patented side lobe suppression technology to achieve excellent out-of-band suppression. It features high-quality optical finishing and anti-reflection coatings for superior beam quality, high throughput & excellent thermal stability. |
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| 350 nm - 430 nm, Acousto-Optic Tunable Filter for Fluorescence Imaging | |
Acousto-Optic Tunable Filter
from Photon Lines
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| The AOTFnC-UV from Photon Lines is a Tunable Bandpass Acousto-Optic Tunable Filter that operates at a wavelength 350 nm - 430 nm. It has an active aperture of 2 mm x 2 mm and a field of view of 1 degree. This linearly polarised AOTF has a tuning time of less than 2 µs and is ideal for fluorescence imaging, AOTF spectrometers & multi-spectral imaging applications. |
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| Featured Article | | What is a Quantum Memory? | | Quantum memory is the capability of a quantum system to store and retrieve quantum information encoded in the quantum states of particles such as electrons or photons. It is the quantum-mechanical counterpart to conventional computer memory. Quantum memory preserves quantum states for subsequent access. Click here to read the full article. | | | |
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| 900 nm - 1700 nm, SWIR Camera for Beam Profiling Applications | |
Scientific & Industrial Camera
from Photon etc.
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| The Alizé 1.7s from Photon etc. is a 0.33 Megapixel SWIR Camera that has a spectral range of 900 nm - 1700 nm. It has a resolution of 640 (H) x 512 (V) pixels and pixel size of 15 µm. This infrared camera is ideal for semiconductor wafer & device failure SWIR inspection, NIR-II or SWIR bio-imaging, photovoltaics characterization, and laser beam profiling applications. |
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