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Optical Detectors Update

03 March 2026 Newsletter - GoPhotonics

Latest Optical Detectors. View it in your browser

New Products Directory News. Whitepapers Articles Calculators Events Interviews
 
GoPhotonics
Top Optical Detectors
Date: 03 March 2026
 
Sponsored by Deutsche Messe AG
 
Deutsche Messe AG
 
Top Optical Detectors
Photoconductive Antenna
650 nm - 850 nm, Photoconductive Antenna
Photoconductive Antenna  from BATOP

The bPCA-100-05-10-800-h from BATOP is a Photoconductive Antenna that operates at a wavelength of 650 nm - 850 nm. It delivers an average optical power of 10 mW and has a power density of 50000 W/cm². This photoconductive antenna has a laser source with a fluence up to 750 μJ/cm² and pulse durations of 100 fs. It has a repetition rate of 80 MHz, spot diameter of 6 μm, and virtual focal length of 26.5 mm.
Download Datasheet Product Details
Photoconductive Antenna
800 nm THz Photoconductive Antenna for Spectroscopy Applications
Photoconductive Antenna  from Thorlabs Inc

The PCA800 from Thorlabs Inc is a Terahertz Photoconductive Antenna that operates at a wavelength of 800 nm. It delivers a THz output power of less than 7 μW and has an average optical pump laser intensity of up to 620 W/cm² incident on the photoconductive gap. This photoconductive antenna is ideal for time-domain spectroscopy, or continuous-wave THz measurement systems.
Download Datasheet Product Details
Photodetector
320 nm - 1100 nm, Silicon Photodetector for Heterodyne Measurements
Photodetector  from ALPHALAS

The UPD-500-SP from ALPHALAS is a Silicon Photodetector that has a spectral range of 320 nm - 1100 nm. It has a sensitive area diameter of 800 μm or 0.5 mm2 and rise time of less than 500 ps. This photodetector has a bandwidth greater than 0.6 GHz and peak quantum efficiency of 90%. It is ideal for pulse form & pulse duration measurements, and heterodyne measurement applications.
Download Datasheet Product Details
Photodiode
900 nm - 1700 nm, InGaAs/InP Avalanche Photodiode for Sensing Applications
Photodiode  from Excelitas Technologies

The C30733EQC-3 from Excelitas Technologies is an InGaAs/InP Avalanche Photodiode (APD) that has a spectral response of 900 nm - 1700 nm. It has a responsivity of 0.94 A/W (1550 nm) & 0.65 A/W (1650 nm) and bandwidth of 2 GHz. This photodiode has a gain of 40 M and quantum efficiency of over 75%. It is ideal for distributed fiber sensing & distributed acoustic sensing (DAS) applications.
Download Datasheet Product Details
Photomultiplier
420 nm Silicon Photomultipliers for Medical Imaging Applications
Photomultiplier  from onsemi

The ARRAYJ-300XX-16P-PCB from onsemi are Silicon Photomultipliers (SiPM) that operate at a wavelength of 420 nm. They have an array size of 4 mm x 4 mm and a pixel pitch of 3.36 mm. These photomultipliers have an active area of 3 mm x 3 mm and a fill factor of greater than 90%. They are ideal for medical imaging, 3D sensing, biophotonics, high energy physics and LiDAR applications.
Download Datasheet Product Details
Featured Interview
Interview with Tohru Mori from Yokogawa Test & Measurement Corporation
Interview with Tohru Mori from Yokogawa Test & Measurement Corporation
GoPhotonics interviewed Tohru Mori, the Vice President of Yokogawa Test & Measurement Corporation. Tohru Mori leads Yokogawa’s initiatives in optical test and measurement. He has more than 30 years of experience in optical measurement technologies. Click here to read the full interview.
Photoresistor
560 nm Photoresistor for Light Detection Systems
Photoresistor  from Nanyang Lida Optic-electronics

The GT36537 from Nanyang Lida Optic-electronics is a Photoresistor that operates at a wavelength of 560 nm. It has a light resistance of 18 kOhms - 50 kOhms and dark resistance of 2 MOhms. This photoresistor has an operating temperature of 30 deg - 70 deg and a resistance illumination coefficient of 0.7. It requires an AC supply voltage of 100 V and consumes 50 mW of power. This photoresistor is ideal for light detection system applications.
Download Datasheet Product Details
Phototransistor
880 nm Phototransistor for Sensing Applications
Phototransistor  from Optrans America

The PT086N4 from Optrans America is a Phototransistor that has a peak sensitivity wavelength of 880 nm. It has a spectral range of 400 nm - 1100 nm and switching time (rise/fall) of 10 μs. This transistor has a C-E current of 3 mA, C-E saturation voltage of 0.2 V, and collector dark current of up to 100 nA. It is available in a TO-18 metal can dome top package and is ideal for optical switches, fiber optical communications, and edge sensing application.
Download Datasheet Product Details
Pyroelectric Detector
5 µm - 14 µm, Digital Pyroelectric Detector for Flame Detection Applications
Pyroelectric Detector  from Broadcom

The AFBR-S6EPY12111B from Broadcom is a Thin Film Digital Pyroelectric Detector that has a filter bandwidth of 5 µm - 14 µm. It has a 5 µm long-pass filter and offers high immunity to electromagnetic interference. This pyroelectric detector uses a digital current-mode read-out to reduce IR-emitter duty cycles and is ideal for gas sensing, flame detection, and gesture recognition applications.
Download Datasheet Product Details
Terahertz Detector
0.1 THz - 30 THz, Terahertz Detector for Power Measurements
Terahertz Detector  from Gentec-EO

The THZ12D-3S-VP-D0 from Gentec-EO is a Terahertz Detector that has a frequency of 0.1 THz - 30 THz. It delivers a maximum average power of 3 W and has an average power density of 30 W/cm2. This terahertz detector has a maximum energy density of less than 1 J/cm2 and rise time of 3 s. and calibration wavelength of 10.6 μm. This terahertz detector is ideal for power measurements.
Download Datasheet Product Details
Terahertz Detector
Pyroelectric Terahertz Detector for Laser Systems
Terahertz Detector  from SLT Sensor & Lasertechnik

The THz 20 from SLT Sensor & Lasertechnik is a Pyroelectric Terahertz Detector that has a working range of 10 µW - 40 mW. It has an aperture of 20 mm and a sensitivity of 0.5 µA/W. This terahertz detector has a rise time of 700 µs and chopper frequency of up to 200 Hz. It has a maximum power density of 15 mW/cm² and thermal time constant of 50 ms. This terahertz detector is ideal for power meters, joule meters & laser system applications.
Download Datasheet Product Details
Sponsored by Deutsche Messe AG
 
Deutsche Messe AG
 
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