Photodiodes from Manufacturers in United States - Page 4
1,178 Photodiodes from 26 Manufacturers meet your specification.
1,178 Photodiodes
from
26 Manufacturers
1,178 Products
from
26 Manufacturers
350 to 1100 nm PIN Photodiodes with Surface Mount, Ceramic Package
Mounted Silicon Photodiode, 200-1100 nm, Anode Grounded
32-Gb/s InGaAs PIN Photodiode
1000 to 1630 nm Avalanche Photodiodes with 8 to 25 nA Dark Current
850nm 25Gb/s GaAs PIN Photodiode
Photodiode Material:
GaAs
Wavelength Range:
840 nm, 850 nm, 860 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 pA
Capacitance:
50 to 100 fF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Channels:
Single, Quad, Multiple
more info
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Silicon Photodiode
Photodiode Material:
Silicon
Wavelength Range:
420 to 675 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA (Reverse)
Capacitance:
1.2 to 400 pF
Package Type:
TO-Can, Leaded
more info
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InGaAs PIN Coaxial photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1310 nm, 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
0.5 to 0.75 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
more info
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InGaAs, PIN Photodiode from 1000 to 1650 nm
1000 to 1630 nm PIN Photodiodes with 2 nA Dark Current
1064 nm TO-Can photodiode
InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
8 to 9 A/W
Package Type:
Ceramic, Chip
more info
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Mounted InGaAs Photodiode, 800-1700 nm, Cathode Grounded
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.04 A/W
Package Type:
Connectorized
more info
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Fiber coupled InGaAs avalanche photodiode with 3GHz bandwidth
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
0.38 to 0.5 pF
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
more info
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400 to 1700 nm InGaAs Positive Sensitive Photodiode with Ceramic Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 150 nA
Capacitance:
130 to 400 pF
Responsivity/Photosensitivity:
0.26 to 1.06 A/W
more info
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High Speed InGaAs PIN Photodiodes diameter of active area=300 µm
High Speed Photodiodes with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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900 nm to 1600 nm, InGaAs PIN Photodiodes for Channel Monitoring & Instrument Applications
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1600 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 1 nA
Capacitance:
0.2 to 0.9 pF
Responsivity/Photosensitivity:
0.7 to 0.9 A/W
Package Type:
Coaxial Pigtail
more info
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46 - 60 of 1178 Photodiodes
Photodiode companies
Responsivity/Photosensitivity (A/W)
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