Photodiodes from Manufacturers in United States - Page 7
1,178 Photodiodes from 26 Manufacturers meet your specification.
1,178 Photodiodes
from
26 Manufacturers
1,178 Products
from
26 Manufacturers
700 to 1100 nm PIN Photodiodes with DIP / DIL / Thru-Hole Package
1000 to 1630 nm Avalanche Photodiodes with 1 to 10 nA Dark Current
Silicon PIN Photodiode from 350 to 1120 nm
InGaAs, PIN Photodiode from 1000 to 1650 nm
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.20 to 0.50 nA
Capacitance:
0.63 to 0.75 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
more info
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Mounted Silicon Photodiode, 350-1100 nm, Cathode Grounded
0.75 to 0.8 A/W photodiode from 1310 to 1550 nm
InGaAs PIN photodiode from 1310 to 1550 nm
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.2 to 0.27 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
more info
Similar products from this company
Edge-illuminated Self-hermetic Monitor Photodiode (EMPD) Chip
1550 nm Fiber-Coupled InGaAs Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 to 1.5 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
more info
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120 to 1000 nm Silicon Large Area Avalanche Photodiode with TO-Can Package
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
700 nm (120 to 1000 nm)
Operation Mode:
Photovoltaic
Capacitance:
130 pF (Terminal)
Responsivity/Photosensitivity:
10 to 27 A/W
more info
Similar products from this company
1000 to 1630 nm Avalanche Photodiodes with 0.2 to 5 nA Dark Current
High Speed InGaAs PIN Photodiodes diameter of active area=50 µm
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 to 0.75 pF
Responsivity/Photosensitivity:
0.8 to 0.90 A/W
Package Type:
Through-Hole
more info
Similar products from this company
350 to 1100 nm PIN Photodiodes with 3.9 mm Active Area
800 to 2600 nm InGaAs PIN Photodiodes with 0.01 to 26 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 26 nA
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
more info
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Receptacle InGaAs PIN photodiodes, 1000um active area, FC connector
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Module with Connector
more info
Similar products from this company
Thermoelectrically Cooled Extended InGaAs Photodiodes
Silicon photodiode from 400 to 1150 nm
91 - 105 of 1178 Photodiodes
Photodiode companies
Responsivity/Photosensitivity (A/W)
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