Photointerrupters - GoPhotonics - Page 5

174 Photointerrupters from 5 Manufacturers meet your specification.
174 Photointerrupters from 5 Manufacturers
174 Products from 5 Manufacturers
Page 5 of 18

Product Specs

Type:
Reflective
Collector-Dark Current:
100 nA
Forward Voltage:
1.2 to 1.6 V
more info

Product Specs

Type:
Reflective
Package Type:
Direct Mount, DIL / DIP / Through Hole
Collector Current:
20 mA
Collector-Dark Current:
100 nA
Collector-Emitter Voltage(Vce):
30 V
Fall Time:
10 µs
Rise Time:
3 to 15 µs
Forward Voltage:
1.2 to 1.6 V
Power Dissipation:
75 mW (Input), 100 mW (Output)
more info

Product Specs

Emitter Material:
GaAs
Type:
Transmissive (Slotted/Gap)
Package Type:
PWB direct mount
Wavelength:
940 nm
Gap Width:
7.2 mm
Collector Current:
20 mA
Collector-Dark Current:
1 to 100 nA
Collector-Emitter Voltage(Vce):
30 V
Fall Time:
10 µs
Rise Time:
570 to 1000 µs
Forward Voltage:
1.2 to 1.4 V
Power Dissipation:
75 mW
more info

Product Specs

Emitter Material:
AlGaAs
Type:
Transmissive (Slotted/Gap)
Package Type:
DIP
Wavelength:
940 nm
Gap Width:
1 mm
Collector Current:
20 mA
Collector-Dark Current:
100 nA
Collector-Emitter Voltage(Vce):
30 V
Fall Time:
10 µs
Rise Time:
15 µs
Forward Voltage:
1.2 to 1.4 V
Power Dissipation:
65 to 75 mW
more info

Product Specs

Type:
Transmissive (Slotted/Gap)
Package Type:
DIL / DIP / Through Hole
Wavelength:
940 nm
Gap Width:
5 mm
Collector Current:
40 mA
Collector-Dark Current:
100 nA
Collector-Emitter Voltage(Vce):
30 V
Fall Time:
20 µs
Rise Time:
20 µs
Forward Voltage:
1.2 to 1.5 V
Power Dissipation:
75 mW (Input), 100 mW (Output)
more info

Product Specs

Emitter Material:
GaAlAs
Type:
Reflective
Package Type:
Surface Mount
Wavelength:
940 nm
Collector Current:
50 mA
Collector-Dark Current:
100 nA
Collector-Emitter Voltage(Vce):
30 V
Fall Time:
20 µs
Rise Time:
20 µs
Forward Voltage:
1.2 to 1.6 V
Power Dissipation:
75 mW
more info

Product Specs

Type:
Reflective
Package Type:
Direct Mount, DIL / DIP / Through Hole
Collector Current:
20 mA
Collector-Dark Current:
100 nA
Collector-Emitter Voltage(Vce):
30 V
Fall Time:
4 to 20 µs
Rise Time:
3 to 15 µs
Forward Voltage:
1.2 to 1.6 V
Power Dissipation:
75 mW (Input), 100 mW (Output)
more info

Product Specs

Emitter Material:
GaAs
Type:
Transmissive (Slotted/Gap)
Package Type:
Screw Mount
Gap Width:
5 mm
Power Dissipation:
200 mW
more info
ITR323 SMD type 940nm

Product Specs

Emitter Material:
AlGaAs
Type:
Transmissive (Slotted/Gap)
Package Type:
Surface Mount
Wavelength:
940 nm
Gap Width:
1.1 mm
Collector Current:
20 mA
Collector-Dark Current:
100 nA
Collector-Emitter Voltage(Vce):
35 V
Fall Time:
10 µs
Rise Time:
15 µs
Forward Voltage:
1.2 to 1.4 V
Power Dissipation:
65 to 75 mW
more info

Product Specs

Type:
Transmissive (Slotted/Gap)
Package Type:
DIL / DIP / Through Hole, Screw Mount
Wavelength:
940 nm
Gap Width:
3.1 mm
Collector Current:
20 mA
Collector-Dark Current:
1 µA
Collector-Emitter Voltage(Vce):
30 V
Forward Voltage:
1.2 to 1.5 V
Power Dissipation:
75 mW
more info
41 - 50 of 174 Photointerrupters
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Emitter Material

Wavelength (nm)

Type

Gap Width (mm)

Collector Current (mA)

Collector-Dark Current (nA)

Collector-Emitter Voltage(Vce) (V)

Fall Time (µs)

Rise Time (µs)

Forward Voltage (V)

Power Dissipation (mW)

Package Type

Country