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| | | Top Optical Detectors | | | Date: 16 December 2025 | | | |
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| 650 nm - 850 nm, Photoconductive Antenna | |
Photoconductive Antenna
from BATOP
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| The bPCA-100-05-10-800-h from BATOP is a Photoconductive Antenna that operates at a wavelength of 650 nm - 850 nm. It delivers an average optical power of 10 mW and has a power density of 50000 W/cm2. This photoconductive antenna has a laser source with a fluence up to 750 μJ/cm2. It has a repetition rate of 80 MHz and spot diameter of 6 μm. This photoconductive antenna has a virtual focal length of 26.5 mm. |
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| 670 nm - 855 nm, Photodetector for Offset Phase Locking Applications | |
Photodetector
from Vescent
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| The D2-260 from Vescent is a Photodetector that operates at a wavelength of 670 nm - 855 nm. It has a bandwidth from 250 MHz to above 9 GHz and maximum input optical power (light intensity) of 1 mW. This pre-amplified detector has an RF power from -6 dBm to -13 dBm and is ideal for detecting beat notes or offset phase locking, and pulse timing & trigger generation applications. |
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| 560 nm Cadmium Sulfide Photoresistor for Light/Dark Switching Applications | |
Photoresistor
from Sicube Photonics
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| The GL12537 from Sicube Photonics is a Cadmium Sulfide (CdS) Photoresistor that has a spectral peak of 560 nm. It has a photo resistance of 18 kOhms - 50 kOhms, dark resistance of 5 MOhms, and resistance illumination coefficient of 0.7. This photoresistor has a rise & decay time of 30 ms and is ideal for light-sensitive detector circuits and light or dark activated switching applications. |
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| 400 nm - 700 nm, CdS Photoresistor for Flame Detection Applications | |
Photoresistor
from Advanced Photonix
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| The NSL-A6032 from Advanced Photonix is a CdS Photoresistor that operates at a wavelength of 400 nm - 700 nm. It has a spectral peak of 600 nm and gamma coefficient of 0.7. This photoresistor has a light resistance of 120 kOhms - 210 kOhms and minimum dark resistance of 3 MOhms. It is ideal for industrial systems, photography light meters, solar street lights & flame detection applications. |
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| 400 nm - 1100 nm, Silicon Photodiode for Light Sensing Applications | |
Photodiode
from EPIGAP OSA Photonics GmbH
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| The EOPD-940-0-15 from EPIGAP OSA Photonics GmbH is a Silicon Photodiode that has a spectral range of 400 nm - 1100 nm. It has a peak sensitivity wavelength of 940 nm and responsivity of 0.22 A/W (at 410 nm) & 0.6 A/W (940 nm). This photodiode has a square active area of 15 mm2 and is ideal for light sensing and detection in industrial monitoring & scientific instrumentation applications. |
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| 800 nm Silicon Phototransistor for Industrial Equipment Applications | |
Phototransistor
from ROHM Semiconductor
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| The SML-H10TB from ROHM Semiconductor is a Silicon Phototransistor that operates at a wavelength of 800 nm. It has a light current of 2 mA - 4 mA and dark current of up to 0.5 µA. This phototransistor has a collector-emitter voltage of 32 V, collector current of 30 mA, and an emitter-collector voltage of 5 V. It is ideal for home appliance and industrial equipment applications. |
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| Single Channel Pyroelectric Detector for Flame Detection Applications | |
Pyroelectric Detector
from InfraTec
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| The LME-336 from InfraTec GmbH Infrarotsensorik und Messtechnik is a Single Channel Pyroelectric Detector that has a minimum field of view of 80o (CaF2 or BaF2 0.4 mm thick) or 90o (silicon substrate 0.5 mm thick). It has a detectivity of 4 x 108 cm·sqrt(Hz)/W and an rms noise density of 57 μV/sqrt(Hz). This pyroelectric detector is ideal for flame detection, and radiometry applications. |
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