EGA2000-850-N

Laser Diode by ams OSRAM

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The EGA2000-850-N from ams OSRAM is a Laser Diode with Wavelength 842 nm, 850 nm, 858 nm, Output Power 3.62 to 4.82 W, Output Power 3.62 to 4.82 W, Operating Voltage 1.9 to 2.6 V, Operating Current 5 A. More details for EGA2000-850-N can be seen below.

Product Specifications

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Product Details

  • Part Number
    EGA2000-850-N
  • Manufacturer
    ams OSRAM
  • Description
    Industrial High-Power Flood Illuminator

Applications

  • Application
    Industrial applications using 3D Time-of-Flight and 2D NIR systems, Machine vision, Automated guided vehicles (AGV), Autonomous robots, Night vision

General Parameters

  • Technology
    Vertical-Cavity Surface-Emitting Laser (VCSEL)
  • Operation Mode
    Pulsed Laser
  • Wavelength
    842 nm, 850 nm, 858 nm
  • Output Power
    3.62 to 4.82 W
  • Output Power
    3.62 to 4.82 W
  • Pulse Duration
    100 µs
  • Spectral Width (FWHM)
    0.1 to 3 nm
  • Operating Voltage
    1.9 to 2.6 V
  • Operating Current
    5 A
  • Duty Cycle
    0.02
  • Operating Current
    5 A
  • Reverse Voltage
    5 V
  • Reverse Current(LD)
    25 nA
  • Power Conversion Efficiency
    31 to 45%
  • Beam Divergence
    55 to 61 Degree (Parallel), 38 to 44 Degree (Perpendicular)
  • Beam Divergence Parallel
    55 to 61 Degree
  • Beam Divergence Perpendicular
    38 to 44 Degree
  • Laser Color
    Infrared
  • Package Type
    Surface Mount
  • Package
    Surface Mount
  • Lead Soldering Temperature
    260 Degree C
  • Relative Humidity
    0.85
  • Type
    Free Space Laser Diode

Physical Properties

  • Dimension
    4.1 x 4.1 x 1.38 mm
  • RoHS
    Yes

Temperature

  • Operating Temperature
    -40 to 105 Degree C
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents

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