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PGAS3S12H

Laser Diode by Excelitas Technologies
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The PGAS3S12H from Excelitas Technologies is a Laser Diode with Wavelength 895 nm, 905 nm, 915 nm (Center), Output Power 75 to 85 W, Output Power 75 to 85 W, Threshold Current 2.5 A, Operating Current 30 A. More details for PGAS3S12H can be seen below.

Product Specifications

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Product Details

  • Part Number
    PGAS3S12H
  • Manufacturer
    Excelitas Technologies
  • Description
    905 nm Single-epi Pulsed Semiconductor Lasers

Applications

  • Application
    Laser range finding, Laser safety curtains (laser scanning), Laser speed measurements (LIDAR), Automotive adaptive cruise control (ACC), Material excitation in medical and other analytical applications, Weapons simulation, Proximity Sensing

General Parameters

  • Type
    Free Space Laser Diode
  • Operation Mode
    Pulsed Laser
  • Wavelength
    895 nm, 905 nm, 915 nm (Center)
  • Output Power
    75 to 85 W
  • Output Power
    75 to 85 W
  • Spectral Width (FWHM)
    5 nm
  • Pulse Duration
    200 ns
  • Configuration
    Stack
  • Beam Divergence
    10 Degree (Parallel), 25 to 30 Degree (Perpendicular)
  • Beam Divergence Parallel
    10 Degree
  • Beam Divergence Perpendicular
    25 to 30 Degree
  • Wavelength Temp. Coefficient
    0.25 nm/Degree C
  • Threshold Current :
    2.5 A
  • Peak Forward Current
    30 A
  • Reverse Voltage
    2 V
  • Operating Current
    30 A
  • Operating Current
    30 A
  • Duty Factor
    0.001
  • Emitting Area
    300 x 225 µm
  • Series Resistance
    0.158 Ohms
  • Lead Soldering Temperature
    260 Degree C
  • Package Type
    TO-Can, Sub-Mount, Coaxial Pigtailed
  • Package
    TO-5.6, TO-9, Sub-Mount, Coaxial Pigtailed

Physical Properties

  • RoHS
    Yes

Temperature

  • Operating Temperature
    -55 to 85 Degree C
  • Storage Temperature
    -55 to 105 Degree C

Technical Documents
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