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TPGEW1S03H

Laser Diode by Excelitas Technologies
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The TPGEW1S03H from Excelitas Technologies is a Laser Diode with Wavelength 895 nm, 905 nm, 915 nm (Center), Output Power 18 to 20 W, Output Power 18 to 20 W, Threshold Current 0.75 A, Operating Current 10 A. More details for TPGEW1S03H can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPGEW1S03H
  • Manufacturer
    Excelitas Technologies
  • Description
    Single chip laser – Triple epi-cavity 905 nm Pulsed Semiconductor Lasers

Applications

  • Application
    Laser range finding, Laser-based speed enforcement, IR-illumination, Laser skin therapy

General Parameters

  • Type
    Free Space Laser Diode
  • Operation Mode
    Pulsed Laser
  • Wavelength
    895 nm, 905 nm, 915 nm (Center)
  • Output Power
    18 to 20 W
  • Output Power
    18 to 20 W
  • Spectral Width (FWHM)
    5 nm
  • Pulse Duration
    100 ns
  • Beam Divergence
    10 Degree (Parallel), 25 Degree (Perpendicular)
  • Beam Divergence Parallel
    10 Degree
  • Beam Divergence Perpendicular
    25 Degree
  • Wavelength Temp. Coefficient
    0.25 nm/Degree C
  • Threshold Current :
    0.75 A
  • Forward Voltage
    10.6 V
  • Peak Forward Current
    10 A
  • Reverse Voltage
    2 V
  • Operating Current
    10 A
  • Operating Current
    10 A
  • Operating Voltage
    10.6 V
  • Duty Factor
    0.001
  • Emitting Area
    75 x 10 µm
  • Series Resistance
    0.41 Ohms
  • Lead Soldering Temperature
    260 Degree C
  • Package Type
    TO-Can
  • Package
    TO-Can

Physical Properties

  • RoHS
    Yes

Temperature

  • Operating Temperature
    -55 to 85 Degree C
  • Storage Temperature
    -55 to 105 Degree C

Technical Documents
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