Laser Diode by LD-PD Inc

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The TDLAS-DFBCHIPS-A-A81-W1653.7 from LD-PD Inc is an InGaAsP Distributed Feedback (DFB) Laser Diode that operates at a wavelength of 1653.7 nm. It delivers an output power of 5.5 mW and has a wavelength tolerance of ±1 nm. This semiconductor laser diode has a 20 dB width of 1 nm and quantum efficiency of 0.12 mW/mA. It has a beam divergence of 25 degrees (parallel) and 35 degrees (perpendicular).

The TDLAS-DFBCHIPS-A-A81-W1653.7 has a side mode suppression ratio (SMSR) of 40 dB and forward voltage of 1.3 V. It has a kink deviation above 30% and resistance of 8 Ohms. This laser diode requires a threshold current of 5 mA and consumes 80 mA of current. It has a Multi-Quantum Well (MQW) active layer and is available in a chip form that measures 300 mm x 254 mm x 100 mm. This laser diode is ideal for tunable diode laser absorption spectroscopy, CH4 Monitoring, and gas detection applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    LD-PD Inc
  • Description
    1653.7 nm InGaAsP DFB Laser Diode for Gas Detection Applications


  • Application
    Tunable diode laser absorption spectroscopy, CH4 Monitoring

General Parameters

  • Technology
    Distributed Feedback (DFB), Multi-Quantum Well (MQW)
  • Operation Mode
    CW Laser
  • Wavelength
    1653.7 nm
  • Wavelength Tolerance
    ±1 nm
  • Output Power
    5.5 mW
  • Output Power
    5.5 mW
  • Spectral Width (FWHM)
    1 nm
  • Operating Voltage
    1.3 to 2 V
  • Operating Current
    80 to 120 mA
  • Operating Current
    80 to 120 mA
  • Forward Voltage
    1.3 to 2 V
  • Reverse Voltage
    2 V
  • Reverse Voltage(PD)
    20 V
  • Threshold Current :
    5 to 10 mA
  • Laser Gain Medium
  • Beam Divergence
    25 Degree (Parallel), 35 Degree (Perpendicular)
  • Beam Divergence Parallel
    25 Degree
  • Beam Divergence Perpendicular
    35 Degree
  • Series Resistance
    8 Ohms
  • Package Type
  • Package
  • Type
    Free Space Laser Diode
  • Note
    SMSR: 40 dB, Quantum Efficiency: 0.08 to 0.12 mW/mA


  • Storage Temperature
    -5 to 70 Degree C

Technical Documents

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