The TDLAS-DFBCHIPS-A-A81-W1653.7 from LD-PD Inc is an InGaAsP Distributed Feedback (DFB) Laser Diode that operates at a wavelength of 1653.7 nm. It delivers an output power of 5.5 mW and has a wavelength tolerance of ±1 nm. This semiconductor laser diode has a 20 dB width of 1 nm and quantum efficiency of 0.12 mW/mA. It has a beam divergence of 25 degrees (parallel) and 35 degrees (perpendicular).
The TDLAS-DFBCHIPS-A-A81-W1653.7 has a side mode suppression ratio (SMSR) of 40 dB and forward voltage of 1.3 V. It has a kink deviation above 30% and resistance of 8 Ohms. This laser diode requires a threshold current of 5 mA and consumes 80 mA of current. It has a Multi-Quantum Well (MQW) active layer and is available in a chip form that measures 300 mm x 254 mm x 100 mm. This laser diode is ideal for tunable diode laser absorption spectroscopy, CH4 Monitoring, and gas detection applications.
