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QL80S4HD-Y

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The QL80S4HD-Y from Quantum Semiconductor International is a Laser Diode with Wavelength 803 to 813 nm, Output Power 500 mW, Output Power 500 mW, Output Power (CW) 500 mW, Threshold Current 100 to 200 mA. More details for QL80S4HD-Y can be seen below.

Product Specifications

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Product Details

  • Part Number
    QL80S4HD-Y
  • Manufacturer
    Quantum Semiconductor International
  • Description
    MOCVD grown 808 nm band AlGaAs laser diode with quantum well structure

Applications

  • Application
    Solid state laser excitation, Medical use, Material processes, Measurement

General Parameters

  • Technology
    Quantum Well
  • Type
    Free Space Laser Diode
  • Operation Mode
    CW Laser
  • Wavelength
    803 to 813 nm
  • Output Power
    500 mW
  • Output Power
    500 mW
  • Output Power (CW)
    500 mW
  • Configuration
    Single-Emitter
  • Beam Divergence Parallel
    4 to 17 Degree
  • Beam Divergence Perpendicular
    20 to 40 Degree
  • Threshold Current :
    100 to 200 mA
  • Reverse Voltage
    LD Reverse Voltage: 2 V
  • Operating Current
    550 to 700 mA
  • Operating Current
    550 to 700 mA
  • Reverse Voltage(PD)
    30 V
  • Operating Voltage
    2.2 to 3 V
  • Operating Current (CW)
    550 to 700 mA
  • Laser Color
    Infrared
  • Package Type
    TO-Can
  • Package
    TO-5 (f 9mm)
  • Note
    Beam Angle Parallel: ±3 Degree, Beam Angle Parpendicular: ±3 Degree, Optical Distance: ±80 µm

Physical Properties

  • Dimension
    9.0 mm

Temperature

  • Operating Temperature
    -10 to 40 °C
  • Storage Temperature
    -40 to 85 °C

Technical Documents
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