QL83H6SA

Laser Diode by Roithner Lasertechnik

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The QL83H6SA from Roithner Lasertechnik is a single-mode AlGaAs infrared laser diode with a quantum well structure that operates at a wavelength of 830 nm. It delivers an optical output power of 20 mW with a slope efficiency of 0.6 W/A. This laser diode has a parallel beam divergence angle of 9 degrees and a perpendicular beam divergence angle of 30 degrees. It requires an operating voltage of 1.9 V and 45 mA of current. It is available in a 5.6 mm TO-Can package with integrated PD and is ideal for many industrial applications.

Product Specifications

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Product Details

  • Part Number
    QL83H6SA
  • Manufacturer
    Roithner Lasertechnik
  • Description
    830 nm AlGaAs Single Mode IR Laser Diode for Industrial Applications

Applications

  • Application
    Industrial

General Parameters

  • Technology
    Quantum Well
  • Type
    Free Space Laser Diode
  • Operation Mode
    CW Lasers
  • Wavelength
    830 nm
  • Output Power
    20 mW
  • Output Power
    0.02 W
  • Slope Efficiency
    0.3 to 9 W/A
  • Configuration
    Single-Emitter
  • Beam Divergence
    7 to 35 Degree
  • Beam Divergence Parallel
    7 to 12 Degree
  • Beam Divergence Perpendicular
    25 to 35 Degree
  • Chip Technology
    AlGaAs
  • Wavelength Tolerance
    ±1 nm
  • Transverse Mode
    Single Transverse Mode
  • Threshold Current :
    15 to 30 mA
  • Forward Current(PD)
    30
  • Operating Current
    40 to 70 mA
  • Reverse Voltage(PD)
    30
  • Reverse Current(LD)
    2 V
  • Operating Voltage
    1.9 to 2.5 V
  • Monitor Current
    0.1 to 1 mA
  • Laser Color
    Infrared
  • Lead Soldering Temperature
    260 Degree C
  • Package Type
    TO-Can
  • Package
    5.6 mm TO-56 Package
  • Note
    Beam Angle : 3 Degree

Physical Properties

  • Dimension
    5.6 mm
  • RoHS
    Yes

Temperature

  • Operating Temperature
    -30 to 60 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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