TO56m-100

Laser Diode by SemiNex Corporation

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The TO56m-100 from SemiNex Corporation is a High Power Pulsed Laser Diode that operates at a wavelength of 1250 nm with a spectral width of 15 nm. It delivers an optical output power of 11 W. This laser diode has a parallel beam divergence of 10 degrees and perpendicular beam divergence of 30 degrees. The TO56m-100 has a threshold current of 1 A, drive current of ~ 29 A and a forward voltage of 8.5 V. It is available in a compact TO56 package with a 1.9mm pedestal, and an optional 2.8mm cap. This laser diode is ideal for OEM medical, consumer medical, LiDAR, Military targeting, range finding, and illumination applications.

Product Specifications

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Product Details

  • Part Number
    TO56m-100
  • Manufacturer
    SemiNex Corporation
  • Description
    1250 nm Mini Pulsed Laser Diode

Applications

  • Application
    OEM, LiDAR, Illumination
  • Application Industry
    Medical, Aerospace / Military

General Parameters

  • Type
    Free Space Laser Diode
  • Operation Mode
    Pulsed Laser
  • Wavelength
    1250 nm
  • Output Power
    11 W
  • Slope Efficiency
    0.2 W/A
  • Beam Divergence Parallel
    14 Degrees
  • Beam Divergence Perpendicular
    30 Degrees
  • Chip Technology
    InP
  • Emitter Width
    50 µm
  • Power Conversion Efficiency
    0.02
  • Threshold Current :
    1000 mA
  • Operating Current
    20 A
  • Operating Voltage
    7.3 V
  • Laser Color
    Infrared
  • Emitting Area
    50 x 1 µm (W x H)
  • Series Resistance
    0.2 Ohms
  • Package Type
    TO-Can
  • Tags
    TO56 Mini
  • Note
    Cavity Length : 1.5 mm

Physical Properties

  • Dimension
    5.6 x 4.3 mm (D x L)
  • Weight
    0.31 g

Temperature

  • Operating Temperature
    -40 to 60 Degree C
  • Storage Temperature
    -40 to 80 Degree C

Technical Documents

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