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HL65221DG

Laser Diode by Ushio Inc.
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The HL65221DG from Ushio Inc. is a Laser Diode with Wavelength 652 nm, 660 nm, 665 nm (Lasing), Output Power 200 mW (CW)/400 mW (Pulsed), Output Power 200 mW (CW)/400 mW (Pulsed), Output Power (CW) 200 mW, Output Power (Pulsed) 400 mW. More details for HL65221DG can be seen below.

Product Specifications

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Product Details

  • Part Number
    HL65221DG
  • Manufacturer
    Ushio Inc.
  • Description
    660nm/210mW(CW)/420mW(Pulse) AlGaInP Laser Diode

Applications

  • Application
    Sensor application, Light source of optical equipments

General Parameters

  • Type
    Free Space Laser Diode
  • Operation Mode
    CW Laser, Pulsed Laser
  • Wavelength
    652 nm, 660 nm, 665 nm (Lasing)
  • Output Power
    200 mW (CW)/400 mW (Pulsed)
  • Output Power
    200 mW (CW)/400 mW (Pulsed)
  • Output Power (CW)
    200 mW
  • Output Power (Pulsed)
    400 mW
  • Pulse Duration
    30 ns
  • Beam Divergence
    5 to 11 Degree (Parallel), 11 to 19 Degree (Perpendicular)
  • Beam Divergence Parallel
    5 to 11 Degree
  • Beam Divergence Perpendicular
    11 to 19 Degree
  • Laser Gain Medium
    AlGaInP
  • Transverse Mode
    TE
  • Threshold Current :
    60 to 90 mA
  • Reverse Voltage
    2 V
  • Operating Current
    230 mA (CW)/405 mA (Pulsed)
  • Operating Current
    230 mA (CW)/405 mA (Pulsed)
  • Reverse Voltage(PD)
    30 V
  • Operating Voltage
    2.7 to 3.2 V
  • Operating Current (CW)
    230 to 270 mA
  • Operating Current (Pulsed)
    405 mA
  • Monitor Current
    0.1 to 1.3 mA
  • Fiber Modes
    Single Mode
  • Package Type
    TO-Can
  • Package
    TO-Can

Temperature

  • Operating Temperature
    -10 to 75 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents
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