Photodetectors - Page 4

448 Photodetectors from 30 Manufacturers meet your specification.
448 Photodetectors from 30 Manufacturers
448 Products from 30 Manufacturers
Page 4 of 45
320 to 1100 nm UV-VIS-NIR Module with Connector Silicon Photodetector

Product Specs

Spectral Band:
Ultraviolet, Visible, Infrared
Photodetector Type:
PN
Photodetector Material:
Silicon (Si)
RF Connector:
BNC (DC Coupled)
Package Type:
Module with Connector
Wavelength Range:
320 to 1100 nm
Active Area Diameter:
9.8 mm
Supply Voltage:
12 V
Dark Current:
0.9 to 10 nA
Responsivity/Photosensitivity:
0.1 to 0.72 A/W
Rise Time:
35 ns
more info
3.8 to 4.2 µm Mid-Infrared Photodetectors with 2.5 to 5.5 mA Dark Current

Product Specs

Spectral Band:
Mid-IR
Package Type:
Module
Wavelength Range:
3.8 to 4.2 µm
Active Area Diameter:
0.3 mm
Dark Current:
2.5 to 5.5 mA
Responsivity/Photosensitivity:
1.8 to 2.2 A/W
more info
900 to 1700 nm Near-IR, Infrared Module with Connector InGaAs Photodetector

Product Specs

Spectral Band:
Near-IR, Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
RF Connector:
BNC
Package Type:
Module with Connector
Wavelength Range:
900 to 1700 nm
Active Area Diameter:
0.2 mm
Supply Voltage:
12 V
Responsivity/Photosensitivity:
9 A/W
Bandwidth:
DC to 50 MHz
more info
600 to 1750 nm SWIR Multichip Emitter with 1.6 to 6.3 mW Power

Product Specs

Spectral Band:
Short Wave-IR
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Package Type:
Surface Mount
Wavelength Range:
600 to 1750 nm
Dark Current:
2 µA
Responsivity/Photosensitivity:
0.7 A/W
Rise Time:
0.63 ns
more info
830 nm Near-IR Module with Connector GaAs Photodetector

Product Specs

Spectral Band:
Near-IR
Photodetector Type:
PIN
Photodetector Material:
Gallium Arsenide (GaAs)
RF Connector:
SMA
Package Type:
Module with Connector
Wavelength Range:
830 nm
Active Area Diameter:
60 µm
Supply Voltage:
3 VDC
Dark Current:
<0.5 nA
Responsivity/Photosensitivity:
0.53 A/W
Bandwidth:
>12.5 GHz
Rise Time:
<30 ps
more info
950 to 1650 nm Near-IR, Infrared Module with Connector InGaAs Photodetector

Product Specs

Spectral Band:
Near-IR, Infrared
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
RF Connector:
SMA - Female
Package Type:
Module with Connector
Wavelength Range:
950 to 1650 nm
Supply Voltage:
5 to -12 V
Bandwidth:
DC to 200 MHz
Rise Time:
1 ns
more info
400 nm - 1700 nm, Avalanche Photodiodes for Spectroscopy Applications

Product Specs

Spectral Band:
Visible, Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Fiber optic connector:
FC/APC
Package Type:
Module with Connector
Wavelength Range:
400 to 1700 nm
Active Area Diameter:
0.5 to 3 mm
Bandwidth:
DC to 240 MHz
more info
2000 nm Infrared Module with Connector InGaAs Photodetector

Product Specs

Spectral Band:
Infrared
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Fiber optic connector:
FC/UPC
RF Connector:
SMA
Package Type:
Module with Connector
Wavelength Range:
2000 nm
Active Area Diameter:
40 µm
Supply Voltage:
3 VDC
Dark Current:
<1 µA
Responsivity/Photosensitivity:
0.95 A/W
Bandwidth:
>10 GHz
Rise Time:
<28 ps
more info
900 nm - 1700 nm, InGaAs Photodetector for Measuring Temporal Pulse Shape

Product Specs

Spectral Band:
Near-IR, Infrared
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
RF Connector:
SMA
Package Type:
Benchtop
Wavelength Range:
900 to 1700 nm
Active Area Diameter:
0.032 mm
Supply Voltage:
6 VDC
Dark Current:
3 nA
Responsivity/Photosensitivity:
0.95 A/W
Bandwidth:
15 GHz
Rise Time:
0.025 ns
more info
700 to 1100 nm Spectral Range Near-IR, Infrared Through-Hole Package Photodetector

Product Specs

Spectral Band:
Near-IR, Infrared
Package Type:
TO-Can
Wavelength Range:
700 to 1100 nm
Supply Voltage:
5 to 15 V
more info
320 to 1100 nm UV-VIS-NIR Module with Connector Silicon Photodetector

Product Specs

Spectral Band:
Ultraviolet, Visible, Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Silicon (Si)
RF Connector:
BNC
Package Type:
Module with Connector
Wavelength Range:
320 to 1100 nm
Active Area Diameter:
0.126 mm
Dark Current:
0.001 nA
Bandwidth:
2 GHz
Rise Time:
175 ps
more info
900 nm - 1700 nm, InGaAs Photodetector for Measuring Temporal Pulse Shape

Product Specs

Spectral Band:
Near-IR, Infrared
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
RF Connector:
BNC
Package Type:
Benchtop
Wavelength Range:
900 to 1700 nm
Active Area Diameter:
0.1 mm
Supply Voltage:
6 VDC
Dark Current:
2 nA
Responsivity/Photosensitivity:
1.1 A/W
Bandwidth:
2 GHz
Rise Time:
0.175 ns
more info
3.5 to 4.2 µm Mid-Infrared Photodetectors with 8 to 25 mA Dark Current

Product Specs

Spectral Band:
Mid-IR
Package Type:
Module
Wavelength Range:
3.5 to 4.2 µm
Active Area Diameter:
0.5 mm
Dark Current:
8 to 25 mA
Responsivity/Photosensitivity:
1 to 1.6 A/W
more info
1000 to 3000 nm Infrared Module with Connector PbS Photodetector

Product Specs

Spectral Band:
Infrared
Photodetector Type:
PN
Photodetector Material:
Lead Sulfide (PbS)
Package Type:
Module with Connector
Wavelength Range:
1000 to 3000 nm
more info
31 - 40 of 448 Photodetectors
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