Photodiodes from Manufacturers in Germany - Page 12
261 Photodiodes from 9 Manufacturers meet your specification.
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: Silicon Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
45 to 50 A/W
Package Type:
Surface Mount
more info
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Description: Silicon Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
45 to 50 A/W
Package Type:
Surface Mount
more info
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1100 nm
Description: InGaAs Avalanche photodiode from 1000 to 1630 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
1.7 to 2.1 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
Ceramic, Submount, TO-Can
more info
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon Avalanche photodiode from 400 to 1000 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
5 to 10 A/W
Package Type:
TO-Can, Surface Mount
more info
Similar products from this company
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: 400 to 1000 nm Silicon Avalanche Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
30 to 38 A/W
Package Type:
TO-Can, Surface Mount, Submount, Ceramic
more info
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166 - 180 of 261 Photodiodes
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