Photodiodes from Manufacturers in Germany - Page 10
261 Photodiodes from 9 Manufacturers meet your specification.
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon PIN photodiode from 950 to 1680 nm
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Silicon PIN photodiode from 610 to 1080 nm
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs Avalanche photodiode from 1000 to 1630 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Capacitance:
0.32 to 0.4 pF
Responsivity/Photosensitivity:
0.85 to 1.05 A/W
Package Type:
Ceramic, Submount, TO-Can
more info
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Description: Silicon PIN photodiode from 430 to 1100 nm
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: Silicon Avalanche photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
40 to 50 A/W
Package Type:
Surface Mount
more info
Similar products from this company
Description: Silicon Avalanche photodiode from 1100 to 1700 nm
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
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