Photodiodes from Manufacturers in Germany - Page 7
261 Photodiodes from 9 Manufacturers meet your specification.
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1000 nm
Description: 0.25 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
75 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
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Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
222 to 392 nm
Operation Mode:
Photoconductive
Capacitance:
10 pF (Junction)
Responsivity/Photosensitivity:
95 to 190 mA/W
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Description: 390 nm to 800 nm, Silicon PIN Photodiode for Ambient Light Sensor Applications
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: InGaAs Avalanche photodiode from 900 to 1700 nm
Description: 0.25 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
75 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
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Description: Silicon PIN photodiode from 820 to 880 nm
Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 µA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
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Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 3 nA
Responsivity/Photosensitivity:
50 A/W
more info
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Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
13 to 20 pF (Junction)
Responsivity/Photosensitivity:
0.18 to 0.16 A/W
more info
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Description: Silicon PIN photodiode from 430 to 1100 nm
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