Photodiodes from Manufacturers in Germany - Page 6
261 Photodiodes from 9 Manufacturers meet your specification.
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
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Description: InGaAs PIN photodiode from 800 to 1700 nm
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Array bare chip PbS near-infrared detector
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
13 to 20 pF (Junction)
Responsivity/Photosensitivity:
0.18 to 0.16 A/W
more info
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Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: 0.25 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
75 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
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Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 500 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
more info
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Description: Silicon Avalanche photodiode from 550 to 1050 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
550 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 3 nA
Responsivity/Photosensitivity:
45 A/W
Package Type:
TO-Can, Ceramic, Surface Mount, Submount
more info
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Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
13 to 20 pF (Junction)
Responsivity/Photosensitivity:
0.18 to 0.16 A/W
more info
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Description: Silicon PIN photodiode from 950 to 1680 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
more info
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