Photodiodes from Manufacturers in Germany - Page 3
261 Photodiodes from 9 Manufacturers meet your specification.
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Infrared detector PbS photoconductive detector Double encapsulated TO-package
Description: 0.05 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
30 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
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Description: 960 nm, PIN photodiode
Description: Silicon PIN photodiode from 430 to 1100 nm
Description: InGaAs PIN photodiode from 800 to 1700 nm
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: Array module PbS near-infrared detector
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
222 to 392 nm
Operation Mode:
Photoconductive
Capacitance:
10 pF (Junction)
Responsivity/Photosensitivity:
95 to 190 mA/W
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Multi-Pixel bare chip PbS near-infrared detector
Description: 5 mm² active area UV-detector Silicon carbide photodiode
Description: Silicon PIN photodiode from 430 to 1100 nm
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