Photodiodes from Manufacturers in Germany - Page 8
261 Photodiodes from 9 Manufacturers meet your specification.
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
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Description: 0.95 µm - 1.65 µm, InGaAs Avalanche Photodiode for LiDAR Applications
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
222 to 392 nm
Operation Mode:
Photoconductive
Capacitance:
10 pF (Junction)
Responsivity/Photosensitivity:
95 to 190 mA/W
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Description: Silicon PIN photodiode from 350 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
70 to 170 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: 4 x 1.25 mm² active area UV-detector Silicon carbide quadrant photodiode
Description: Silicon PIN photodiode from 600 to 1050 nm
Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 µA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
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Description: Silicon Avalanche photodiode from 400 to 1000 nm
Description: 2 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
150 pF (Junction)
Responsivity/Photosensitivity:
0.13 to 0.16 A/W
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Description: Silicon PIN photodiode from 390 to 1100 nm
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
Ceramic, Chip
more info
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Description: Silicon Avalanche photodiode from 550 to 1050 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
550 to 1050 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
45 A/W
Package Type:
TO-Can, Ceramic, Surface Mount, Submount
more info
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Description: Silicon PIN photodiode from 640 to 1060 nm
106 - 120 of 261 Photodiodes
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