Photodiodes from Manufacturers in Germany - Page 4
261 Photodiodes from 9 Manufacturers meet your specification.
Selected Filters Reset All
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
15 to 30 nA
Capacitance:
500 to 1400 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
more info
Similar products from this company
Description: InGaAs PIN photodiode from 800 to 1700 nm
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Responsivity/Photosensitivity:
50 A/W
more info
Similar products from this company
Description: Infrared detector PbS photoconductive detector Double encapsulated TO-package
Description: 1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 358 nm
Operation Mode:
Photoconductive
Capacitance:
70 pF (Junction)
Responsivity/Photosensitivity:
0.17 to 0.135 A/W
more info
Similar products from this company
Description: Silicon PIN photodiode from 390 to 800 nm
Description: InGaAs PIN photodiode from 1300 to 1550 nm
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
more info
Similar products from this company
Description: 400 nm - 1000 nm, Silicon Avalanche Photodiode for Laser Scanner Applications
Description: PbS near-infrared detector
Description: 2 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
150 pF (Junction)
Responsivity/Photosensitivity:
0.13 to 0.16 A/W
more info
Similar products from this company
Description: Silicon PIN photodiode from 300 to 1100 nm
Description: InGaAs PIN photodiode from 800 to 1700 nm
Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 µA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
more info
Similar products from this company
Description: InGaAs Avalanche photodiode from 700 to 1000 nm
46 - 60 of 261 Photodiodes
Photodiode companies
../../56photodiodesPhotodiodessphotodetector_type:expand,sphotodiode_material:expand,spackage_type:expand,soperation_mode:expand,soptical_connector:collapsed,srf_connector:collapsed,sschannels:expand,ssconfiguration:expand,stags:expandsphotodetector_type:single,sphotodiode_material:multiple,spackage_type:multiple,soperation_mode:single,soptical_connector:single,srf_connector:single,sschannels:single,ssconfiguration:single,stags:singlesphotodetector_type:Photodetector Type,sphotodiode_material:Photodiode Material,spackage_type:Package Type,soperation_mode:Operation Mode,soptical_connector:Optical Connector,srf_connector:RF Connector,sschannels:Channels,ssconfiguration:Configuration,stags:Tagsswavelength_range:expand,scapacitance:expand,sphotosensitivity:expand,sdetector_dark_current:expandswavelength_range:3489,scapacitance:3540,sphotosensitivity:3524,sdetector_dark_current:3533{"sphotodetector_type":"or","sphotodiode_material":"or","spackage_type":"or","soperation_mode":"or","swavelength_range":"or","soptical_connector":"or","scapacitance":"or","sphotosensitivity":"or","srf_connector":"or","sdetector_dark_current":"or","sschannels":"or","ssconfiguration":"or","stags":"or"}swavelength_range:nm,scapacitance:pF,sphotosensitivity:A/W,sdetector_dark_current:nAno
56
-
View Similar Products
You can now view similar products from this company on GoPhotonics.
