Photodiodes from Manufacturers in Germany - Page 5

261 Photodiodes from 9 Manufacturers meet your specification.
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  • Country : Germany
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Infrared detector PbS photoconductive detector Double encapsulated TO-package
Photodiode Material:
PbS
Wavelength Range:
2.7 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
more info
Description: 1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
200 fA
Capacitance:
70 pF (Junction)
Responsivity/Photosensitivity:
0.17 to 0.135 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon PIN photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
1.5 pF
Package Type:
Chip
Module:
No
more info
Description: InGaAs PIN photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
750 to 1800 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Infrared detector PbS photoconductive detector Double encapsulated TO-package
Photodiode Material:
PbS
Wavelength Range:
2.7 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
more info
Description: 4.8 mm² active area VIS/NIR-detector Silicon-photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 20 nA
Capacitance:
8 to 50 pF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon PIN photodiode from 600 to 1040 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
600 to 1040 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 3 nA
Capacitance:
12 pF
Package Type:
Chip
Module:
No
more info
Description: InGaAs PIN photodiode from 1300 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
4 to 7 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Infrared detector PbS photoconductive detector Bondable bare chip
Photodiode Material:
PbS
Wavelength Range:
2.7 µm
Operation Mode:
Photovoltaic
Package Type:
Bare Chip
Configuration:
Single
more info
Description: 0.05 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
30 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon PIN photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
5.2 pF
Package Type:
Chip
Module:
No
more info
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  • Country : Germany

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