Photodiodes from Manufacturers in Germany - Page 2

261 Photodiodes from 9 Manufacturers meet your specification.
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  • Country : Germany
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 500 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1300 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.25 to 0.4 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
Ceramic, Submount
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1000 pA
Capacitance:
3.3 pF
Responsivity/Photosensitivity:
85 to 110 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Infrared detector PbS photoconductive detector Bondable bare chip
Photodiode Material:
PbS
Wavelength Range:
2.7 µm
Operation Mode:
Photovoltaic
Package Type:
Bare Chip
Configuration:
Single
more info
Description: 1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
200 fA
Capacitance:
70 pF (Junction)
Responsivity/Photosensitivity:
0.17 to 0.135 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 820 nm, Silicon photodiode
Photodiode Material:
Silicon
Wavelength Range:
820 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
10 pF
Package Type:
Surface Mount
Module:
No
more info
Description: Silicon PIN photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
17 to 48 pF
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1300 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 3 nA
Capacitance:
1.5 to 2 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
20 to 50 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Infrared detector PbS photoconductive detector Bondable bare chip
Photodiode Material:
PbS
Wavelength Range:
2.7 µm
Operation Mode:
Photovoltaic
Package Type:
Bare Chip
Configuration:
Single
more info
Description: 0.05 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
30 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 1000 nm, PIN photodiode
Photodetector Type:
PIN
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
20 to 35 pF
Responsivity/Photosensitivity:
1 A/W
Package Type:
Leaded
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
0.5 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Module:
No
more info
Description: InGaAs PIN photodiode from 1300 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 to 0.75 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
15 to 30 nA
Capacitance:
500 to 1400 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
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  • Country : Germany

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