Photodiodes from Manufacturers in Germany - Page 11
261 Photodiodes from 9 Manufacturers meet your specification.
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
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Description: Silicon, InGaAs Avalanche photodiode from 700 to 1000 nm
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
70 to 200 pA
Responsivity/Photosensitivity:
85 to 110 A/W
more info
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Description: 400 nm - 1000 nm, Si Avalanche Photodiode for Fluorescence Applications
Description: 400 nm - 1000 nm, Si Avalanche Photodiode for Spectroscopy Applications
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1100 nm
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: InGaAs Avalanche photodiode from 1000 to 1630 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 250 nA
Capacitance:
4.1 to 4.6 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
Ceramic, Submount, TO-Can
more info
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Description: Silicon, InGaAs Avalanche photodiode from 700 to 1000 nm
Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1000 nm
Description: Silicon, InGaAs Avalanche photodiode from 700 to 1100 nm
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