Photodiodes from Manufacturers in Germany - Page 13
261 Photodiodes from 9 Manufacturers meet your specification.
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Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Description: Silicon Geiger Mode Avalanche Photodiode for Photon Counting
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
70 to 1000 pA
Responsivity/Photosensitivity:
85 to 110 A/W
Package Type:
TO-Can Pigtail, TO-Can
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Description: PbS Detectors Cooled Ultimate
Description: Regular InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 75 nA
Capacitance:
15 to 1550 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
TO-Can, Surface Mount, Chip
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Description: Extended InGaAs PIN Photodiodes for Spectroscopy Applications
Photodiode Material:
InGaAs
Wavelength Range:
2.45 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 750 uA
Capacitance:
35 to 3200 pF
Responsivity/Photosensitivity:
0.1 to 1.50 A/W
more info
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Description: Si APD Array
Description: Si APD Array
Description: 900 - 3500 nm, InAs Substrate based on heterostructures IR Detector
Description: Up to 2.2 µm Extended InGaAs Panchromatic PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
up to 2200 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 50 µA
Capacitance:
40 to 5200 pF
Responsivity/Photosensitivity:
1.40 A/W
more info
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Description: Pbs Detectors cooled Standard PB27-Series
Description: PbSe Detectors Cooled Standard PB50-Series
Description: Regular InGaAs Photodiode IG17-Series
Description: Regular InGaAs Photodiode IG17-Series
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 1.65 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 75 nA
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
more info
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Description: Pbs Detectors Uncooled PB25-Series
Description: PbSe Detectors Cooled Ultimate PB55-Series
Description: PbSe Detectors PB45-Series
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