Photodiodes - Page 149

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Multi Channel X-Ray Detectors and Photoconductive Arrays
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
160 pF
Responsivity/Photosensitivity:
0.50 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.1 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.1 µm
Operation Mode:
Photovoltaic
Dark Current:
100 to 1000 nA
Capacitance:
230 to 500 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
17000 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Description: Chip Silicon PIN photodiode with dark current of 10 to 100 nA
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
830 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 100 nA
Capacitance:
190 pF
Package Type:
Chip
Configuration:
Single
Module:
No
more info
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 15 nA
Capacitance:
130 to 700 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 pA
Capacitance:
30 to 50 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
PCB
Configuration:
Array
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Cavity Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 20 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single)
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 30 pA
Capacitance:
20 to 40 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
Ceramic
Configuration:
Array
Module:
No
more info
Description: Tetra-Lateral PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 5 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.35 to 0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
50 pA
Capacitance:
3000 pF
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 5000 nA
Capacitance:
8 to 375 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1060 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
18 pF
Responsivity/Photosensitivity:
0.47 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Large Active Area InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
200 to 450 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 pA
Capacitance:
2300 pF
Responsivity/Photosensitivity:
0.38 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
20 nA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Dual
Module:
No
more info
Description: Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 pA
Capacitance:
30 to 50 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
PCB
Configuration:
Array
Module:
No
more info
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