Photodiodes - Page 145

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 12000 nA
Capacitance:
30 to 1500 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 700 to 1150 nm
Photodiode Material:
Silicon
Wavelength Range:
700 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
35 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.45 to 0.72 A/W
Package Type:
Surface Mount, Ceramic, Chip
Configuration:
Single
Module:
No
more info
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
0.09 nA
Capacitance:
2.6 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Regular InGaAs Photodiode IG17-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 1.65 µm
Operation Mode:
Photovoltaic
Capacitance:
305 pF
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
15 to 50 nA
Capacitance:
0.35 nF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 pA
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
Ceramic
Configuration:
Array
Module:
No
more info
Description: Inversion Layer Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photoconductive
Capacitance:
1600 pF
Responsivity/Photosensitivity:
0.09 to 0.14 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: PbSe Detectors Cooled Standard PB50-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 4.9 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon Avalanche Photodiode 650 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
650 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
35 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 10 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.45 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Photoconductive Devices
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 10 nA
Capacitance:
8 to 50 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: PbSe Detectors Cooled Ultimate PB55-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 5.2 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon photodiode from 330 to 720 nm
Photodiode Material:
Silicon
Wavelength Range:
330 to 720 nm
Operation Mode:
Photoconductive
Dark Current:
2000 pA
Capacitance:
1 nF
Responsivity/Photosensitivity:
0.29 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 pA
Capacitance:
140 pF
Responsivity/Photosensitivity:
0.38 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 5 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
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