Photodiodes - Page 141
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photovoltaic Devices
Description: Pbs Detectors Uncooled PB25-Series
Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Surface Mount
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Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Responsivity/Photosensitivity:
0.6 to 0.7 A/W
Package Type:
Surface Mount
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Description: 1.59 mm Active Area Red Enhanced Silicon Photodiode with TO-46 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Responsivity/Photosensitivity:
0.32 to 0.55 A/W
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Description: Nd-YAG Optimized Photodiodes
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 200 nA
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: 2 to 12 µm HgCdTe three-stage thermoelectrically cooled photovoltaic detector
Description: Pbs Detectors cooled Standard PB27-Series
Description: Silicon PIN Photodiode from 650 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
650 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.05 nA
Responsivity/Photosensitivity:
0.47 A/W
Package Type:
Through-Hole
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Description: Silicon PIN photodiode from 380 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 500 pA
Responsivity/Photosensitivity:
0.5 to 0.54 A/W
Package Type:
Surface Mount
more info
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Description: 1.7 mm Active Area Silicon PIN Photodiode with TO-46 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.5 nA
Responsivity/Photosensitivity:
0.50 to 0.64 A/W
more info
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Description: Multi Element Photodiode Array
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: Extended InGaAs Photodiodes IG26-Series
Description: Silicon photodiode from 725 to 1100 nm
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Responsivity/Photosensitivity:
0.45 to 0.6 A/W
more info
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2101 - 2115 of 2551 Photodiodes
Photodiode companies
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