Photodiodes - Page 137

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Inversion Layer Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photoconductive
Capacitance:
1600 pF
Responsivity/Photosensitivity:
0.09 to 0.14 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs, InP
Wavelength Range:
1300 nm
Operation Mode:
Photoconductive
Dark Current:
1 uA
Capacitance:
10 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: PbSe Detectors PB45-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 4.7 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
250 pA
Capacitance:
3 nF
Responsivity/Photosensitivity:
0.10 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Surface Mount Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 pA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.33 to 0.58 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 17.9 mm Active Area Silicon Photodiode with Ceramic Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
150 to 300 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
0.55 to 0.6 A/W
Package Type:
Ceramic
Module:
No
more info
Description: Tetra-Lateral PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photovoltaic
Dark Current:
0.025 to 25 nA
Capacitance:
300 pF
Responsivity/Photosensitivity:
0.35 to 0.42 A/W
Package Type:
Flat-Pack
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2.4 to 5.3 µm InAs and InAsSb ambient temperature, optically immersed photovoltaic detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
2.9 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
35 to 50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG22-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
5 to 50 nA
Capacitance:
5200 pF
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: DIP Silicon photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.33 to 0.4 A/W
Package Type:
DIP
Configuration:
Single
Module:
No
more info
Description: 2.54 mm Diameter Active Area Silicon PIN Photodiode with TO-5 Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
12 to 50 nA
Capacitance:
3 to 15 pF
Responsivity/Photosensitivity:
0.32 to 0.64 A/W
Package Type:
TO-Can
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Ceramic Packages w/Leads
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe ambient temperature, optically immersed photovoltaic multiple junction detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.01 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
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