Photodiodes - Page 133

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Detector-Filter Combination Series Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
550 nm
Operation Mode:
Photovoltaic
Capacitance:
1500 pF
Responsivity/Photosensitivity:
0.4 to 0.27 A/W
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description: Silicon PIN photodiode from 700 to 1060 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
700 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
0.50 to 0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: 3.1 mm Active Area RED enhanced Bi-Cell Silicon Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
13 to 60 pF
Responsivity/Photosensitivity:
0.32 to 0.65 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.10 to 1 nA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
4 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.4 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
35 to 50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: PbSe Detectors Cooled Ultimate PB55-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 5.2 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
0.31 nF
Responsivity/Photosensitivity:
0.19 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Surface Mount Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 pA
Capacitance:
700 pF
Responsivity/Photosensitivity:
0.33 to 0.58 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 3.2 mm Bi-Cell Segmented Silicon Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Capacitance:
14 pF
Responsivity/Photosensitivity:
0.6 to 0.66 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Inversion Layer Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Operation Mode:
Photoconductive
Capacitance:
800 pF
Responsivity/Photosensitivity:
0.09 to 0.14 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 1 to 15 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
6 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
1.5 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG22-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Capacitance:
650 pF
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 330 to 720 nm
Photodiode Material:
Silicon
Wavelength Range:
330 to 720 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
1 nF
Responsivity/Photosensitivity:
0.29 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 340 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 10 nA
Capacitance:
85 pF
Responsivity/Photosensitivity:
0.22 to 0.66 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
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