Photodiodes - Page 131
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Capacitance:
300 to 1500 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Module with Connector
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Description: Extended InGaAs Photodiodes IG26-Series
Description: Silicon photodiode from 400 to 1150 nm
Description: Silicon PIN photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.22 to 0.66 A/W
Package Type:
Surface Mount, Ceramic
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Description: 1.2 mm Active Area Silicon Photodiode with Surface Mount Package
Description: 400 nm - 1100 nm, Nd:YAG Silicon Photodiode for Laser Pointing Applications
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
1000 to 3000 nA
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic detector
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
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Description: Extended InGaAs Photodiodes IG22-Series
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
0.2 to 2.5 nA
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
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Description: Silicon photodiode from 320 to 1100 nm
Description: InGaAs PIN photodiode from 0.9 to 1.9 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.9 µm
Operation Mode:
Photovoltaic
Capacitance:
70 to 150 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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Description: 29 mm Active Area Blue Enchanced Photoconductive Silicon Photodiode with Ceramic Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 25 nA
Responsivity/Photosensitivity:
0.15 to 0.18 A/W
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Description: High Speed Silicon Photodiodes with 1.25Gbps Photodiodes
Description: 2 to 12 µm HgCdTe ambient temperature photovoltaic multiple junction quadrant detector
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
more info
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Description: Extended InGaAs Photodiodes IG26-Series
1951 - 1965 of 2551 Photodiodes
Photodiode companies
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