Photodiodes - Page 128
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Series E Eye Response Detectors
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
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Description: Regular InGaAs Photodiode IG17-Series
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 1.65 µm
Operation Mode:
Photovoltaic
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
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Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 2200 nm
Operation Mode:
Photoconductive
Dark Current:
500 to 1000 nA
Responsivity/Photosensitivity:
0.97 A/W
Package Type:
Through-Hole
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Description: Silicon Avalanche Photodiode 800 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
50 A/W
Package Type:
Surface Mount
more info
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
40 to 800 pA
Responsivity/Photosensitivity:
0.75 to 1 A/W
Package Type:
Surface Mount
more info
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Description: InGaAs PIN photodiode from 1260 to 1620 nm
Description: 2.1 mm Active Area Silicon Photodiode with Surface Mount Package
Description: Multi Channel X-Ray Detectors and Photoconductive Arrays
Description: 2.5 to 6.5 µm HgCdTe ambient temperature photovoltaic detector
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
more info
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Description: PbSe Detectors PB45-Series
Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
500 to 1000 nA
Responsivity/Photosensitivity:
0.97 A/W
Package Type:
Through-Hole
more info
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Description: Silicon photodiode from 200 to 1100 nm
Description: Ceramic Silicon photodiode from 190 to 1000 nm
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
50 to 50 nA
Responsivity/Photosensitivity:
8 to 9 A/W
more info
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1906 - 1920 of 2551 Photodiodes
Photodiode companies
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