Photodiodes - Page 125

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Dual
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG22-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Capacitance:
1750 pF
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: RGB COLOR SENSOR photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Operation Mode:
Photoconductive
Dark Current:
80 to 760 pA
Capacitance:
1310 to 1754 pF
Responsivity/Photosensitivity:
0.45 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 800 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
50 A/W
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode with dark current of 0.2 to 60 nA
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 60 nA
Capacitance:
200 to 1200 pF
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: 850 nm GaAs PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
0.2 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip, Die
Module:
No
more info
Description: 8 mm Active Area Blue Enhanced Photoconductive Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
0.16 A/W
Package Type:
Ceramic
Module:
No
more info
Description: Detector-Filter Combination Series Planar Diffused Silicon Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
550 nm
Operation Mode:
Photovoltaic
Capacitance:
1500 pF
Responsivity/Photosensitivity:
0.4 to 0.27 A/W
Package Type:
To-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
9 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.7 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: PbSe Detectors Cooled Standard PB50-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 4.9 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Large active area Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
80 to 760 pA
Capacitance:
57 to 286 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 50 nA
Capacitance:
1.25 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 30 pA
Capacitance:
20 to 40 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
Ceramic
Configuration:
Array
Module:
No
more info
Description: InGaAs Avalanche photodiode from 1260 to 1620 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
7.5 to 10 A/W
Package Type:
TO-Can
Module:
No
more info
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