Photodiodes - Page 126

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Nd-YAG Optimized Photodiodes
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 200 nA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
Channels:
Quad
Module:
No
more info
Description: 93.1 mm Active Area Blue Enhanced Photovoltaic Silicon Photodiode with Ceramic Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
200 to 333 pA
Capacitance:
6 to 12 pF
Responsivity/Photosensitivity:
0.15 to 0.24 A/W
Package Type:
Ceramic
Module:
No
more info
Description: Photoconductive Devices
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
8 to 15 nA
Capacitance:
20 to 150 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: 1 to 14 µm HgCdTe two-stage thermoelectrically cooled photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
9 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.025 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
35 to 50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG22-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 0.5 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Human eye responsephoto diode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Operation Mode:
Photoconductive
Dark Current:
750 uA
Capacitance:
1319 to 1754 pF
Responsivity/Photosensitivity:
0.45 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InP Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InP
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
45 to 150 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 500 pA
Capacitance:
3 pF
Responsivity/Photosensitivity:
500 to 570 mA/W
Package Type:
Surface Mount, Ceramic
Configuration:
Single
Module:
No
more info
Description: 850 nm GaAs PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.7 to 0.9 pF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
Chip, Die
Module:
No
more info
Description: 15 mm Active Area Ultra Low Capacitance Silicon Photodiode with TO-5 Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 147 nA
Capacitance:
6 to 50 pF
Responsivity/Photosensitivity:
0.56 to 0.64 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Back Illuminated InGaAs Photodiode / Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
8 to 10 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 2.4 to 5.3 µm InAs and InAsSb ambient temperature photovoltaic detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
4.5 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.2 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
PIN
Photodiode Material:
InGaAs, InP
Wavelength Range:
1300 nm
Operation Mode:
Photoconductive
Dark Current:
1 uA
Capacitance:
15 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Pbs Detectors cooled Ultimate PB30-Series
Photodiode Material:
PbS
Wavelength Range:
1 to 3.4 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Large active area Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
80 to 760 pA
Capacitance:
140 to 725 pF
Responsivity/Photosensitivity:
0.37 to 0.66 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
1876 - 1890 of 2551 Photodiodes
Photodiode companies

Filters

X

Manufacturers from 

Photodetector Type 

Companies 

Photodiode Material 

Package Type 

Operation Mode 

Wavelength Range (nm)  

Capacitance (pF)  

Responsivity/Photosensitivity (A/W)  

Dark Current (nA)  

Channels 

Configuration 

Tags