Photodiodes - Page 122

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Fully Depleted Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 5 nA
Capacitance:
8.0 to 9 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
TO-Can
Channels:
Single
Module:
No
more info
Description: 2 to 14 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
2 to 14 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.07 to 0.11 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Capacitance:
50 to 130 pF
Responsivity/Photosensitivity:
0.18 to 0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Pbs Detectors cooled Standard PB27-Series
Photodiode Material:
PbS
Wavelength Range:
1 to 3.3 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 1000 pA
Capacitance:
40 to 260 pF
Responsivity/Photosensitivity:
0.43 to 0.64 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
250 pA
Capacitance:
3 nF
Responsivity/Photosensitivity:
0.10 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: DIP, Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
60 to 300 pA
Capacitance:
20 to 35 pF
Responsivity/Photosensitivity:
0.08 to 0.50 A/W
Package Type:
DIP, Ceramic
Configuration:
Array
Channels:
Multiple (35 Channels))
Module:
No
more info
Description: 0.65 mm Active Area Silicon Photodiode with Surface Mount Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 10 nA
Capacitance:
15 to 20 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: Series E Eye Response Detectors
Photodiode Material:
Silicon
Wavelength Range:
550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Capacitance:
20 to 80 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
3.4 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.8 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: PbSe Detectors PB45-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 4.7 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: SILCON QUADRANT PHOTODIODE
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 100 pA
Capacitance:
16 to 166 pF
Responsivity/Photosensitivity:
0.38 to 0.45 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs PIN Photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 20 nA
Capacitance:
2 to 15 pF
Responsivity/Photosensitivity:
0.10 to 1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
800 to 4000 pA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.75 to 1 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 20 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
0.37 to 0.65 A/W
Package Type:
TO-Can
Module:
No
more info
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