Photodiodes - Page 120

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
14 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Capacitance:
50 to 130 pF
Responsivity/Photosensitivity:
0.18 to 0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG22-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.2 µm
Operation Mode:
Photovoltaic
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.1 to 1.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon avalanched photodiode Array
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: DIP, Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 pA
Capacitance:
120 to 550 pF
Responsivity/Photosensitivity:
0.08 to 0.58 A/W
Package Type:
DIP, Ceramic
Configuration:
Array
Channels:
Multiple (46 Channels))
Module:
No
more info
Description: 440 to 700 nm Ambient Light Sensor Photodiode in Surface Mount Package
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
440 to 700 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 10 nA
Capacitance:
30 to 80 pF
Package Type:
Surface Mount
Module:
No
more info
Description: 850 nm GaAs PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 to 0.5 pF
Responsivity/Photosensitivity:
0.5 to 0.6 A/W
Package Type:
Chip
Configuration:
Array
Channels:
Multiple (Up to 12 Channels)
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
2 µm
Operation Mode:
Photoconductive
Dark Current:
5 µm
Capacitance:
275 pF
Responsivity/Photosensitivity:
0.9 to 1.0 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 0.69 mm Active Area Quadrant Silicon Photodiode with TO-46 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
3 to 15 pF
Responsivity/Photosensitivity:
0.32 to 0.65 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Photovoltaic Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
320 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
13 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.03 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 10 nA
Capacitance:
6 to 20 pF
Responsivity/Photosensitivity:
0.18 to 0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Extended InGaAs Photodiodes IG26-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 2.45 µm
Operation Mode:
Photovoltaic
Capacitance:
580 pF
Responsivity/Photosensitivity:
0.7 to 1.36 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Visible light enhanced photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
15 to 25 nA
Capacitance:
25 to 70 pF
Responsivity/Photosensitivity:
0.42 to 0.64 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
Module:
No
more info
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