Photodiodes - Page 117
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Tetra-Lateral PSD’s Position Sensing Detectors (PSD)
Description: Photoconductive Devices
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled photovoltaic detector
Description: 400 to 1060 nm Silicon Photodetectors with 10 nA Dark Current
Description: Pbs Detectors Uncooled PB25-Series
Description: Silicon PIN Photodiode
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 1000 pA
Capacitance:
28 to 180 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
more info
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Description: Silicon Avalanche Photodiode 800 nm
Description: Ceramic Silicon photodiode from 190 to 1100 nm
Description: 4-Quadrant Silicon PIN Photodiode from 690 to 1050 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 50 pA
Capacitance:
1.5 to 15 pF
Responsivity/Photosensitivity:
0.1 to 0.45 mA/mW
more info
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Description: 5.1 mm Diameter Large Active Area Silicon Photodiode with TO-8 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
6.5 to 26 nA
Capacitance:
71 to 345 pF
Responsivity/Photosensitivity:
0.32 to 0.55 A/W
more info
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Description: Detector-Filter Combination Series Planar Diffused Silicon Photodiodes
Description: 1 to 12 µm HgCdTe ambient temperature, optically immersed photoconductive detector
Description: 750 to 1750 nm InGaAs PIN Photodiodes with 0.01 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
750 to 1750 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.46 A/W
Package Type:
DIP / DIL / Thru-Hole
more info
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Description: PbSe Detectors Cooled Ultimate PB55-Series
1741 - 1755 of 2551 Photodiodes
Photodiode companies
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