Photodiodes - Page 121

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
800 nA
Capacitance:
450 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 330 to 720 nm
Photodiode Material:
Silicon
Wavelength Range:
330 to 720 nm
Operation Mode:
Photoconductive
Dark Current:
2 nA
Capacitance:
8 nF
Responsivity/Photosensitivity:
0.29 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 700 to 1060 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
700 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.48 to 0.63 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode for Ambient Light Sensor Applications
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
440 to 700 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 2 nA
Capacitance:
35 to 72 pF
Package Type:
Chip
Module:
No
more info
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Capacitance:
250 to 450 pF
Responsivity/Photosensitivity:
0.9 A/W
Package Type:
Chip, Die
Module:
No
more info
Description: Multi Channel X-Ray Detectors and Photoconductive Arrays
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
12 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.015 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Capacitance:
50 to 130 pF
Responsivity/Photosensitivity:
0.18 to 0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Pbs Detectors cooled Standard PB27-Series
Photodiode Material:
PbS
Wavelength Range:
1 to 3.3 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: OTRON SENSOR quadrant photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.14 nA
Capacitance:
120 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
PCB
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
0.31 nF
Responsivity/Photosensitivity:
0.19 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
380 pF
Responsivity/Photosensitivity:
0.1 to 0.5 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 640 to 1070 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
640 to 1070 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 5 nA
Capacitance:
19 to 42 pF
Package Type:
Chip
Module:
No
more info
Description: InGaAs PIN photodiode from 1260 to 1620 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 2.3 mm Active Area Bi-Cell Silicon Photodiode with TO-5 Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2.5 nA
Capacitance:
8 to 30 pF
Responsivity/Photosensitivity:
0.33 to 0.64 A/W
Package Type:
TO-Can
Module:
No
more info
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.45 to 0.5 A/W
Package Type:
TO-Can
Channels:
Single
Module:
No
more info
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