Photodiodes - Page 118
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Ceramic Packages w/Leads
Description: InGaAs PIN Photodiode
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
400 to 860 pA
Capacitance:
2.6 nF to 170 pF
Responsivity/Photosensitivity:
0.90 to 1.10 A/W
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Description: Silicon photodiode from 750 to 1100 nm
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Description: Silicon PIN Photodiode for Wearable Applications
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 20 nA
Responsivity/Photosensitivity:
0.37 to 0.65 A/W
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Capacitance:
1.8 to 2.2 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
more info
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Description: 1.6 mm Active Area Quadrant Silicon Photodiode
Description: Photops Photodiode-Amplifier Hybrids
Description: 2.5 to 6.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector
Description: High Speed InGaAs PIN Photodiode
Description: PbSe Detectors PB45-Series
Description: InGaAs Avalanched Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
60 to 96 nA
Responsivity/Photosensitivity:
6.6 to 10.4 A/W
more info
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Description: Silicon photodiode from 725 to 1100 nm
Description: Silicon PIN photodiode from 320 to 1060 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
0.57 to 0.63 A/W
more info
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Description: Silicon PIN Photodiode from 430 to 700 nm
1756 - 1770 of 2551 Photodiodes
Photodiode companies
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