Photodiodes - Page 115
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Through-Hole, DIP, DIL
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Description: PbSe Detectors Cooled Standard PB50-Series
Description: UV Enhanced Photo diode
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2.5 to 8 nA
Capacitance:
70 to 465 pF
Responsivity/Photosensitivity:
0.14 to 0.51 A/W
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Description: Silicon photodiode from 400 to 1150 nm
Description: Surface Mount Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 1 nA
Capacitance:
200 to 400 pF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
Surface Mount
more info
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Description: Silicon PIN Photodiode from 750 to 1050 nm
Description: 850 nm GaAs PIN photodiode
Description: 100 mm Active Area Silicon PIN Photodiode with Ceramic Package
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
500 to 1700 pF
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
more info
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Description: 155Mbps/622Mbps/1.25Gbps/2.5Gbps High Speed InGaAs Photodiodes
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic detector
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.1 to 2000 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 2000 nA
Responsivity/Photosensitivity:
0.2 to 0.7 A/W
Package Type:
Surface Mount
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Description: Regular InGaAs Photodiode IG17-Series
Description: Silicon avalanched photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
more info
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Description: InP Avalanche Photodiode from 1100 to 1700 nm
Description: TO-Can Silicon photodiode from 190 to 1000 nm
1711 - 1725 of 2551 Photodiodes
Photodiode companies
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