Photodiodes - Page 115

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Through-Hole, DIP, DIL
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: PbSe Detectors Cooled Standard PB50-Series
Photodiode Material:
PbSe
Wavelength Range:
1 to 4.9 µm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: UV Enhanced Photo diode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2.5 to 8 nA
Capacitance:
70 to 465 pF
Responsivity/Photosensitivity:
0.14 to 0.51 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 1150 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
7 nA
Capacitance:
6 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Surface Mount Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 1 nA
Capacitance:
200 to 400 pF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode from 750 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 850 nm GaAs PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
1.1 to 1.25 pF
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
Package Type:
Chip, Die
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
3 µA
Capacitance:
1200 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 100 mm Active Area Silicon PIN Photodiode with Ceramic Package
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
6 to 30 nA
Capacitance:
500 to 1700 pF
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
Package Type:
Ceramic
Module:
No
more info
Description: 155Mbps/622Mbps/1.25Gbps/2.5Gbps High Speed InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.50 to 20 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
3.4 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.8 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 600 to 1750 nm InGaAs PIN Photodiodes with 0.1 to 2000 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 2000 nA
Capacitance:
6 to 60 pF
Responsivity/Photosensitivity:
0.2 to 0.7 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: Regular InGaAs Photodiode IG17-Series
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
Cut off Wavelength: 1.65 µm
Operation Mode:
Photovoltaic
Capacitance:
700 pF
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
Description: Silicon avalanched photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.80 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InP Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InP
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
45 to 150 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
5 pA
Capacitance:
160 pF
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
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