Photodiodes - Page 111
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Photoconductive Devices
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
30 to 250 nA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
more info
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Description: 158 mm Active Area Solderable Silicon Photodiode
Description: Back Illuminated InGaAs Photodiode / Arrays
Description: 1 to 12 µm HgCdTe ambient temperature, optically immersed photoconductive detector
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 80 nA to 770 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
80 nA to 770 µA
Capacitance:
500 to 3100 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
more info
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Description: Si APD Array
Description: Silicon avalanched photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.20 nA
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
Surface Mount
more info
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Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Surface Mount
more info
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Description: 400 to 1000 nm Visible TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
0.5 A/W
more info
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Description: Silicon PIN Photodiode from 750 to 1050 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 20 nA
Responsivity/Photosensitivity:
0.37 to 0.65 A/W
more info
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Description: 900 to 1700 nm InGaAs Photodiode with 100 µm Diameter
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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Description: Photovoltaic Devices
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled photoconductive detector
1651 - 1665 of 2551 Photodiodes
Photodiode companies
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