Photodiodes - Page 110
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Description: EUV & UV Detectors (SXUV & UVG Family)
Description: 340 to 1100 nm UV-VIS-NIR Ceramic Silicon Photoconductive Photodiode
Description: Silicon PIN Photodiode from 430 to 1100 nm
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.2 to 0.27 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
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Photodiode Material:
InGaAs
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 0.8 nA
Capacitance:
0.6 to 0.8 pF
Responsivity/Photosensitivity:
0.10 to 0.95 A/W
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Description: 42.4 mm Active Area Solderable Die Silicon Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 75 nA
Responsivity/Photosensitivity:
0.5 to 0.7 A/W
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Description: High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled photoconductive detector
Description: 410 to 580 nm Silicon Photodetectors with 5 to 30 pA Dark Current
Description: Extended InGaAs PIN Photodiodes for Spectroscopy Applications
Photodiode Material:
InGaAs
Wavelength Range:
2.45 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 750 uA
Capacitance:
35 to 3200 pF
Responsivity/Photosensitivity:
0.1 to 1.50 A/W
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Description: InGaAs QUADRANT PHOTODIODE
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 100 nA
Capacitance:
8.6 pF to 16.95 nF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
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Description: Silicon Avalanche Photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
1.5 to 1.8 pF
Responsivity/Photosensitivity:
117 to 135 A/W
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Description: 200 to 1000 nm UV-VIS TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 5 nA
Responsivity/Photosensitivity:
0.42 A/W
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Description: Silicon PIN Photodiode from 790 to 1050 nm
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 20 nA
Responsivity/Photosensitivity:
0.37 to 0.65 A/W
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1636 - 1650 of 2551 Photodiodes
Photodiode companies
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