Photodiodes - Page 108

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Segmented Photodiodes (SPOT Series) Position Sensing Detector (PSD)
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.10 to 1 nA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.35 to 6 nA
Capacitance:
40 to 225 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: 2 to 12 µm HgCdTe ambient temperature, optically immersed photovoltaic multiple junction detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
8 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.04 A.mm/W`
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 0.01 to 26 nA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 26 nA
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
Module:
No
more info
Description: Silicon Geiger Mode Avalanche Photodiode for Photon Counting
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
70 to 1000 pA
Capacitance:
3.3 pF
Responsivity/Photosensitivity:
85 to 110 A/W
Package Type:
TO-Can Pigtail, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: SILICON QUADRANT PHOTODIODE
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
36 to 470 pA
Capacitance:
237 to 978 pF
Responsivity/Photosensitivity:
0.57 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 200 nA
Capacitance:
0.5 to 5 pF
Responsivity/Photosensitivity:
50 to 62 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 42 mm2 Photodiode in TO-8 Hermetic Pkg
Photodiode Material:
Silicon
Wavelength Range:
450 nm
Operation Mode:
Photoconductive
Dark Current:
11 to 25 nA
Capacitance:
85 pF
Responsivity/Photosensitivity:
0.20 to 0.28 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 200 to 1000 nm UV-VIS TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 5 nA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 350 to 1120 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1120 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 940 nm Silicon PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
1.1 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 µA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 69.7 mm Solderable Die Silicon Photodiode with Wire
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 50 nA
Capacitance:
300 pF
Responsivity/Photosensitivity:
0.7 A/W
Package Type:
Die
Module:
No
more info
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 1000 nA
Capacitance:
35 to 60 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: Type II superlattice, three-stage thermoelectrically cooled, photoconductive detector
Photodiode Material:
InAs, InAsSb
Wavelength Range:
10.5 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.8 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 800 to 2600 nm InGaAs PIN Photodiodes with 1 nA to 43 µA Current
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA to 43 µA
Capacitance:
20 to 150 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
Module:
No
more info
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