Photodiodes - Page 105
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed Silicon Photodiodes with 1.25Gbps Photodiodes
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
5 to 10 A/W
Package Type:
TO-Can, Surface Mount
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Description: Blue enhanced silicon PDA
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 60 pA
Capacitance:
800 to 100 pF
Responsivity/Photosensitivity:
0.45 to 0.60 A/W
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Description: Silicon photodiode from 400 to 1150 nm
Description: PbSe Single Channel Photodiode for IR Detection
Description: 200 to 1000 nm UV-VIS TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 5 nA
Responsivity/Photosensitivity:
0.42 A/W
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Description: Silicon PIN Photodiode from 350 to 1100 nm
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 200 pA
Responsivity/Photosensitivity:
0.07 to 0.59 mA/mW
more info
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Description: 2 mm Diameter InGaAs Quadrant Segmented Photodiodes with Surface Mount Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 10 nA
Responsivity/Photosensitivity:
0.97 to 1 A/W
Package Type:
Surface Mount
more info
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Description: Inversion Layer Photodiodes
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: 900 to 1700 nm InGaAs PIN Photodiodes with 0.15 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
1 A/W
Package Type:
DIP / DIL / Thru-Hole
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: 850 nm - 1680 nm, InGaAs PIN Photodiode for Instrumentation Applications
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1680 nm
Operation Mode:
Photoconductive
Dark Current:
80 pA to 40 nA
Capacitance:
0 to 1900 pF
Responsivity/Photosensitivity:
0.9 to 1.10 A/W
more info
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Description: Silicon photodiode from 320 to 1100 nm
1561 - 1575 of 2551 Photodiodes
Photodiode companies
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