Photodiodes - Page 102

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
14 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
more info
Description: AP Series - Uncooled PbS Packaged IR Detectors
Photodiode Material:
Pbs
Wavelength Range:
2.2 to 2.4 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 320 to 1000 nm Visible Ceramic Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
80 pF
Responsivity/Photosensitivity:
0.24 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 790 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
790 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
70 pF
Responsivity/Photosensitivity:
0.57 to 0.6 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1260 to 1620 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 10 µA
Capacitance:
750 to 2500 pF
Responsivity/Photosensitivity:
0.10 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 96.1 mm Solderable Chip Silicon Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3.3 µA
Capacitance:
2 nF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Chip, Die
Module:
No
more info
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 25 nA
Capacitance:
300 to 1500 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Through-Hole
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: 2 to 12 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 250 to 1100 nm Silicon Photodetectors with 0.2 to 1 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
70 to 230 pF
Responsivity/Photosensitivity:
0.22 to 0.53 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs Avalanche photodiode from 1000 to 1630 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
1.7 to 2.1 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
Ceramic, Submount, TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
15 to 25 nA
Capacitance:
25 to 48 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
DIP
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Silicon photodiode from 400 to 700 nm
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Operation Mode:
Photovoltaic
Dark Current:
10 nA
Capacitance:
150 pF
Responsivity/Photosensitivity:
0.034 A/W
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
Description: 1 mm2 Photodiode in TO-18 Pkg
Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
0.2 to 2 pF
Responsivity/Photosensitivity:
0.36 to 0.40 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 440 to 1100 nm Near-Infrared TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 8 nA
Capacitance:
3.6 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 780 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
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