Photodiodes - Page 100

2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 100 nA
Capacitance:
5 to 9 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Ceramic Packages w/Leads
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single)
Module:
No
more info
Description: 2 to 12 µm HgCdTe three-stage thermoelectrically cooled photovoltaic detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
4 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 750 to 1060 nm Silicon Photodetectors with 10 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
750 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
6 to 12 pF
Responsivity/Photosensitivity:
0.51 A/W
Package Type:
Leaded
Module:
No
more info
Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon avalanched photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: InGaAs PIN Photodiode from 1300 to 1500 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1500 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 5 nA
Capacitance:
3.7 to 6 pF
Responsivity/Photosensitivity:
0.65 to 0.90 A/W
Package Type:
TO-Can, Ceramic
Configuration:
Single
Module:
No
more info
Description: Electron & Photon Detectors (AXUV Family) X-Ray and Radiation
Wavelength Range:
0.01 to 190 nm
Operation Mode:
Photoconductive
Capacitance:
120 nF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: 320 to 730 nm Visible Silicon Photoconductive Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 730 nm
Operation Mode:
Photoconductive
Dark Current:
10 pA
Capacitance:
700 pF
Responsivity/Photosensitivity:
0.19 to 0.3 A/W
Package Type:
DIP / DIL / Thru-Hole
Configuration:
Single
Channels:
Single
more info
Description: Silicon PIN Photodiode from 870 to 1050 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
870 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
70 pF
Responsivity/Photosensitivity:
0.35 to 0.6 A/W
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.7 to 2 nA
Capacitance:
2.1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
0.7 µA
Capacitance:
300 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: 0.25 mm Diameter InGaAs Photodiode with TO-46 Package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Solderable Chip Series Planar Diffused Silicon Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
2100 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
Description: 2 to 13 µm HgCdTe ambient temperature photovoltaic multiple junction detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
8 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.008 A.mm/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 250 to 1100 nm Silicon Photodetectors with 0.2 to 1 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
70 to 275 pF
Responsivity/Photosensitivity:
0.45 to 0.64 A/W
Package Type:
TO-Can
Module:
No
more info
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