Photodiodes - Page 103
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Large Active Area InGaAs Photodiodes for Infrared Instrumentation & Monitoring
Description: 850 nm GaAs PIN photodiode
Description: 1.1 mm Photovoltaic Solderable Die Silicon Photodiode
Description: Photops Photodiode-Amplifier Hybrids
Description: 2 to 12 µm HgCdTe ambient temperature, optically immersed photoelectromagnetic detector
Description: 350 to 1100 nm Silicon Photodetectors with 0.5 to 2 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Capacitance:
42 to 170 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
more info
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Description: One Direction Position Sensing Detector
Description: Silicon Avalanche Photodiode from 400 to 700 nm
Description: Blue/Green Enhanced 5mm2 Photodiode-Preamplifier
Description: 830 nm Near-Infrared Chip Silicon Photoconductive Photodiode
Description: Silicon PIN Photodiode from 790 to 1050 nm
Description: InGaAs Avalanche photodiode from 1260 to 1620 nm
Description: 107.5 mm Solderable Chip Silicon Photodiode with Wire
1531 - 1545 of 2551 Photodiodes
Photodiode companies
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