Photodiodes - Page 104
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: 400 nm - 1100 nm, Nd:YAG Silicon Photodiode for Laser Pointing Applications
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
1000 to 3000 nA
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
Through-Hole, DIP, DIL
more info
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Description: Series E Eye Response Detectors
Description: 2.4 to 5.3 µm InAs and InAsSb two-stage thermoelectrically cooled, optically immersed photovoltaic detector
Description: 250 to 1100 nm Silicon Photodetectors with 0.2 to 1 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
70 to 230 pF
Responsivity/Photosensitivity:
0.22 to 0.53 A/W
more info
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Description: Silicon Avalanche photodiode from 400 to 1000 nm
Description: Selective wavelength photodiode
Description: Silicon Avalanche Photodiode 800 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
50 A/W
Package Type:
Surface Mount
more info
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Description: High Speed Circular Photodiode Ideal for Radiation Detection
Description: 400 to 1000 nm Visible TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
0.5 A/W
more info
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Description: Silicon PIN Photodiode from 750 to 1050 nm
Description: Silicon PIN photodiode from 200 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
200 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 200 pA
Capacitance:
300 to 1500 pF
Responsivity/Photosensitivity:
0.08 to 0.55 mA/mW
more info
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Description: 2.7 mm Photoconductive Solderable Chip Silicon Photodiode with Wire
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Description: 2 to 12 µm HgCdTe two-stage thermoelectrically cooled photovoltaic multiple junction detector
Description: 250 to 1100 nm Silicon Photodetectors with 0.5 to 2 nA Dark Current
Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2 nA
Capacitance:
65 to 190 pF
Responsivity/Photosensitivity:
0.21 to 0.4 A/W
more info
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1546 - 1560 of 2551 Photodiodes
Photodiode companies
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