Photodiodes - Page 109
2551 Photodiodes from 62 Manufacturers meet your specification.
Description: Inversion Layer Photodiodes
Description: PbS Detectors Cooled Ultimate
Description: Large Active Area Silicon Photodiode
Description: InGaAs PIN Photodiode from 800 to 1700 nm
Description: 2.5 mm2 Circular Active Area EUV Detectors for Photolithography Applications
Description: 320 to 1000 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 3 nA
Responsivity/Photosensitivity:
0.24 A/W
more info
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Description: Silicon PIN Photodiode from 790 to 1050 nm
Description: GaAs PIN photodiode from 770 to 860 nm
Description: 1100 to 1700 nm InGaAs Quadrant Segmented Photodiodes with 2 Diameter
Description: Soft X-Ray, Far UV Enhanced Photodiodes
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled photoconductive detector
Description: 900 to 1700 nm InGaAs PIN Photodiodes with 0.15 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
1 A/W
Package Type:
DIP / DIL / Thru-Hole
more info
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Description: Regular InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 75 nA
Capacitance:
15 to 1550 pF
Responsivity/Photosensitivity:
0.9 to 1.05 A/W
Package Type:
TO-Can, Surface Mount, Chip
more info
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Description: Silicon PIN Photodiode Array
Description: InP Avalanche Photodiode from 1100 to 1700 nm
1621 - 1635 of 2551 Photodiodes
Photodiode companies
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